h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers ?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 september 2009 h11aa1m, h11aa2m, H11AA3M, h11aa4m ac input/phototransistor optocouplers features bi-polar emitter input built-in reverse polarity input protection underwriters laboratory (ul) recognized file #e90700, volume 2 vde approved file #102497 (ordering option ?? applications ac line monitor unknown polarity dc sensor telephone line interface description the h11aaxm series consists of two gallium-arsenide infrared emitting diodes connected in inverse parallel driving a single silicon phototransistor output. schematic package outlines 1 2 6 5 coll 4 emitter base 3
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 2 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers absolute maximum ratings (t a =25? unless otherwise speci?d) stresses exceeding the absolute maximum ratings may damage the device. the device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. in addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. the absolute maximum ratings are stress ratings only. symbol parameter device value units tot al device t stg storage temperature all -40 to +150 ? t opr operating temperature all -40 to +100 ? t sol lead solder temperature all 260 for 10 sec ? p d t otal device power dissipation derate linearly from 25? all 250 mw 2.94 mw/? emitter i f continuous forward current all 60 ma i f (pk) forward current ?peak (1? pulse, 300 pps) all ?.0 a p d led power dissipation derate linearly from 25? all 120 mw 1.41 mw/? detector i c continuous collector current all 50 ma p d detector power dissipation derate linearity from 25? all 150 mw 1.76 mw/?
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 3 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers electrical characteristics (t a = 25? unless otherwise speci?d.) individual component characteristics *typical values at t a = 25? t ransfer characteristics isolation characteristics *typical values at t a = 25? symbol parameter test conditions device min. typ.* max. unit emitter v f input forward voltage i f = ?0ma all 1.17 1.5 v c j capacitance v f = 0 v, f = 1.0mhz all 80 pf detector bv ceo breakdown voltage collector to emitter i c = 1.0ma, i f = 0 all 30 100 v bv cbo collector to base i c = 100?, i f = 0 all 70 120 v bv ebo emitter to base i e = 100?, i f = 0 all 5 10 v bv eco emitter to collector i e = 100?, i f = 0 all 7 10 v i ceo leakage current collector to emitter v ce = 10 v, i f = 0 h11aa1m H11AA3M h11aa4m 150na h11aa2m 1 200 c ce capacitance collector to emitter v ce = 0, f = 1mhz all 10 pf c cb collector to base v cb = 0, f = 1mhz all 80 pf c eb emitter to base v eb = 0, f = 1mhz all 15 pf symbol characteristics test conditions device min. typ.* max. units ctr ce current transfer ratio, collector to emitter i f = ?0ma, v ce = 10v h11aa4m 100 % H11AA3M 50 h11aa1m 20 h11aa2m 10 current transfer ratio, symmetry i f = ?0ma, v ce = 10v (figure 11) all .33 3.0 v ce(sat) saturation voltage, collector to emitter i f = ?0ma, i ce = 0.5ma all .40 v symbol characteristic test conditions min. typ.* max. units c i-o pa c kage capacitance input/output v i-o = 0, f = 1mhz 0.7 pf v iso isolation voltage f = 60hz, t = 1 sec. 7500 vac(pk) r iso isolation resistance v i-o = 500 vdc 10 11 ?
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 4 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers safety and insulation ratings as per iec 60747-5-2, this optocoupler is suitable for ?afe electrical insulation?only within the safety limit data. compliance with the safety ratings shall be ensured by means of protective circuits. symbol parameter min. typ. max. unit installation classi?ations per din vde 0110/1.89 ta b le 1 f or rated main voltage < 150vrms i-iv f or rated main voltage < 300vrms i-iv climatic classi?ation 55/100/21 p ollution degree (din vde 0110/1.89) 2 cti comparative tracking index 175 v pr input to output test voltage, method b, v iorm x 1.875 = v pr , 100% production test with tm = 1 sec, partial discharge < 5pc 1594 v peak input to output test voltage, method a, v iorm x 1.5 = v pr , type and sample test with tm = 60 sec, partial discharge < 5pc 1275 v peak v iorm max. working insulation voltage 850 v peak v iotm highest allowable over voltage 6000 v peak external creepage 7 mm external clearance 7 mm insulation thickness 0.5 mm rio insulation resistance at ts, v io = 500v 10 9 ?
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 5 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers typical performance characteristics fig. 2 normalized ctr vs. forward current i f ?forward current (ma) normalized ctr fig. 3 normalized ctr vs. ambient temperature normalize d ctr t a ?ambient temperature ( c) fig. 5 ctr vs. rbe (saturated) r be - base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) fig. 4 ctr vs. rbe (unsaturated) r be ?base resistance (k ?) normalized ctr ( ctr rbe / ctr rbe(open) ) fig. 6 collector-emitter saturation voltage vs collector current i c - collector current (ma) v ce (sat) ?collector-emitter saturation voltage (v) fig. 1 input voltage vs. input current v f inpu t voltag e (v) i f ?input cu rrent (ma) 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 t a = 25 c i f = 2.5ma i f = 20ma i f = 10ma i f = 5ma -2.0 -1.5 -1.0 -0.5 0.0 0.5 1.0 1.5 2.0 -100 -80 -60 -40 -20 0 20 40 60 80 100 t a = 25 c 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 5v t a = 25 c i f = 10ma i f = 5ma i f = 20ma 10 100 1000 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 v ce = 0.3v t a = 25 c i f = 10ma i f = 5ma i f = 20ma -60 -40 -20 0 20 40 60 80 100 0.2 0.4 0.6 0.8 1.0 1.2 1.4 i f = 10ma v ce = 5v normalized to i f = 10ma, t a = 25 c i f = 5ma i f = 20ma 0510 15 20 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 t a = 25 c v ce = 5v normalized to i f = 10ma
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 6 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers typical performance characteristics (continued) normalized t on ?(t on(r be ) / t on(open ) ) fig. 8 normalized t on vs. r be r be - base resistance (k ?) fig. 7 switching speed vs. load resistor r ?load resistor (k ?) switching speed ( s) normalize d t off ?(t off(r be ) / t off(open) ) fig. 9 normalized t off vs. r be r be ?base resistance (k ?) fig. 10 dark current vs. ambient temperature t a ?ambient temperature ( c) i ceo ?collector -emit ter dark curr ent (na) v ce ?collector to emitter voltage (v) .01 .05 .1 .5 5 110 normalize d output current .01 .005 .05 .1 .5 1 5 10 fig. 11 output symmetry characteristics i f = i - 10ma i i f = i 10ma i normalized to: v ce = 10 v i f = 10 ma the maximum peak output current will be no more than three times the minimum peak output current at i f = 10 ma 10 100 1000 10000 100000 0 1 2 3 4 5 6 7 v cc = 10v i c = 2ma r l = 100 ? t a = 25 c 10 100 1000 10000 100000 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v cc = 10v i c = 2ma r l = 100 ? t a = 25 c 0.1 1 10 100 0.1 1 10 100 1000 i f = 10ma v cc = 10v t a = 25 c t off t on t r t f 0204 06080100 0.1 1 10 100 1000 10000 v ce = 10v v ce = 30v
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 7 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers package dimensions 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 8.13?.89 6.10?.60 pin 1 64 13 0.25?.36 5.08 (max.) 3.28?.53 0.38 (min.) 2.54?.81 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 7.62 (typ.) 15?(typ.) 0.20?.30 0.20?.30 10.16?0.80 through hole 0.4" lead spacing surface mount rcommended pad layout (1.78) (2.54) (1.52) (7.49) (10.54) (0.76) 8.13?.89 note: all dimensions in mm. 6.10?.60 8.43?.90 pin 1 64 13 0.25?.36 2.54 (bsc) (0.86) 0.41?.51 1.02?.78 0.76?.14 0.38 (min.) 3.28?.53 5.08 (max.) 0.20?.30 0.16?.88 (8.13)
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 8 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers ordering information marking information option order entry identi?r (example) description no option h11aa1m standard through hole device s h11aa1sm surface mount lead bend sr2 h11aa1sr2m surface mount; tape and reel t h11aa1tm 0.4" lead spacing v h11aa1vm vde 0884 tv h11aa1tvm vde 0884, 0.4" lead spacing sv h11aa1svm vde 0884, surface mount sr2v h11aa1sr2vm vde 0884, surface mount, tape and reel h11aa1 v x yy q 1 2 6 4 3 5 *note ?parts that do not have the ? option (see de?ition 3 above) that are marked with date code ?25 or earlier are marked in portrait format. de?itions 1f airchild logo 2d e vice number 3 vde mark (note: only appears on parts ordered with vde option ?see order entry table) 4 one digit year code, e.g., ? 5t wo digit work week ranging from ?1 to ?3 6 assembly package code
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 9 h11aa1m, h11aa2m, H11AA3M, h11aa4m ?ac input/phototransistor optocouplers carrier tape specification reflow profile 4.0 0.1 1.5 min user direction of feed 2.0 0.05 1.75 0.10 11.5 1.0 24.0 0.3 12.0 0.1 0.30 0.05 21.0 0.1 4.5 0.20 0.1 max 10.1 0.20 9.1 0.20 1.5 0.1/-0 300 280 260 240 220 200 180 160 140 120 100 80 60 40 20 0 c time (s) 0 60 180 120 270 260 c >245 c = 42 sec time above 183 c = 90 sec 360 1.822 c/sec ramp up rate 33 sec
?006 fairchild semiconductor corporation www.fairchildsemi.com h11aa1m, h11aa2m, H11AA3M, h11aa4m rev. 1.0.3 10 tradem arks th e following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its global subsidiaries ,and is not in tended to be an exhaustive list of all such trademarks. auto-spm build it now coreplus corepower crossvolt ctl current transfer logic ecospark e fficentmax ezswitch * * fair child fairchild semiconductor fa ct quiet series fact f ast fa stvcore fetbench flashwriter * fps f-pfs frfet global power resource sm green fps green fps e-series g max gto in tellimax isoplanar me gabuck mi crocoupler microfet mi cropak m illerdrive moti onmax mo tion-spm optologic op toplanar pdp spm powe r-spm po we rtrench powerxs pr ogrammable active droop qfet qs quiet series r apidconfigure saving our world, 1mw/w/kw at a time sm artmax smart start spm stealth s uperfet sup ersot -3 s upersot -6 s upersot -8 s upremos syncfet sy nc-lock * th ep ower franchise ti nyboost tinybuck ti nylogic tinyopto tinypower tinypwm tinywire trifault detect t ruecurrent * serdes uhc ultra frfet unifet vcx vi sualmax xs *t rademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fa i rchild semiconductor reserves the right to make changes without further notice to any products herein to improve reliability, function, or design. fairchild does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild? 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